Samsung researchers have published a detailed account of an experimental NAND architecture that aims to cut one of the technology’s largest power drains by as much as 96%. The work — Ferroelectric ...

Using just two NAND or inverter gates its possible to build a D type (or ‘toggle’) flip-flop with a push-button input. At power-up the output of gate N2 is at a logical ‘1’, ensuring that transistor T2 ...

Although wrapping one’s brain around the concepts of positive, negative, and assertion-level logic can require some mental gymnastics, understanding these topics can be very rewarding. Although ...

IM Flash Technologies LLC, the joint venture between Intel and Micron Technologies, is considering how and when to take its NAND flash memory ICs into the third dimension but reckons its development ...

It's getting increasingly expensive to continue along the chip trajectory predicted by Moore's Law, the observation that the number of transistors on a chip doubles every year or two. One way that ...

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(Nanowerk Spotlight) Organic semiconductors have long held promise for enabling deformable electronic devices that can be manufactured at low cost and high volumes using printing techniques. However, ...

Toshiba today announced the development of the first 48-layer, three-dimensional flash memory. Based on a vertical stacking technology that Toshiba calls BiCS (Bit Cost Scaling), the new flash memory ...

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