CISSOID has expanded its standard power semiconductor portfolio with the launch of a new 1200V/300A half‑bridge ...
The MIXA450PF1200TSF is a high power IGBT module featuring dual 450 A and 1.2 kV in phase leg topology designed for energy efficiency power conversion and motor control applications. It is available ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...
New power modules with solderable pin terminals have changed the structure of inverters in applications up to 20kW. The new EconoPACK+ package was designed to fill the gap between 20kW and 100kW ...
The MIXD600PF650TSF is a 600-V, 650-A IGBT module in the SimBus-F outline featuring high level of integration with only one power semiconductor module required for the whole drive. It is designed for ...
IRVINE, Calif., May 16, 2011 (GLOBE NEWSWIRE) -- Microsemi Corporation(Nasdaq:MSCC), a leading provider of semiconductor technology aimed at building a smart, secure, connected world, today announced ...
Amongst a flurry of announcements, On Semiconductor has introduced 1.2kV 25, 35, and 50A transfer-moulded IGBT power modules – in converter-inverter-brake (CIB) and converter-inverter (CI) ...
Mitsubishi has announced its sixth-generation of IGBT modules for power converters. “The sixth-generation carrier-stored trench-gate bipolar transistor reduces collector-emitter saturation voltage by ...
Previously, a Power Electronics Technology article titled “Inverted Acoustic System Cuts IGBT Failures” (September 2011) examined the use of an acoustic microscope to image heat-blocking defects such ...
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